دیتاشیت FDP10N60NZ

FDP(F)10N60NZ

مشخصات دیتاشیت

نام دیتاشیت FDP(F)10N60NZ
حجم فایل 787.868 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

دانلود دیتاشیت FDP(F)10N60NZ

FDP(F)10N60NZ Datasheet

مشخصات

  • Manufacturer: ON Semiconductor
  • Series: UniFET-II™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1475pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 185W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FDP10
  • detail: N-Channel 600V 10A (Tc) 185W (Tc) Through Hole TO-220-3

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